2020,Том 2, Выпуск 4
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S. Zainabidinov, U. Babakhodjaev, A. Nabiyev

INVESTIGATION OF RECOMBINATIONAL PROCESSES THROUGH PHOTOELECTRIC CONDUCTIVITY OF THE FILM OF HYDROGENATED AMORPHOUS SILICON AND ITS MODIFICATION

Sh. Daliev, J. Khamdamov, Y. Ravshanov, D. Esbergenov

INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY

A. Zharin, K. Pantsialeyeu, A. Svistun, K. Tyavlovsky

DETERMINING THE LIFETIME OF MINORITY CHARGE CARRIERS AND IRON IMPURITY CONCENTRATION IN SEMICONDUCTOR STRUCTURES WITH SUBMICRON LAYERS

A. Mavlyanov, A. Urakov, A. Narbayev

PHOTOELECTRIC MEASUREMENTS OF SELENIUM DOPED SILICON

S. Rembeza, A. Boboev, T. Men'shikova, T. Svistova

STRUCTURAL FEATURES OF THE THIN-FILM n-ZnO/p-Si HETEROJUNCTION

A. Uteniyazov, K. Ismailov, M. Nsanbaev, E. Ysenbaeva

THE POSITIVE FEEDBACK AMPLIFICATION MECHANISM OF THE INJECTION PHOTODIODE BASED ON LARGE-BLOCK CdTe FILMS

G. Gulyamov, G. Dadamirzaev, M. Dadamirzayev, M. Kosimova

THE INFLUENCE OF THE MICROWAVE FIELD ON THE CHARACTERISTICS OF THE p-n JUNCTION

Z. Azamatov, V. Kim, M. Yoldoshev

COMPACT SPECKLE INTERFEROMETER FOR DIGITAL SHEAROGRAPHY

M. Kurbanov, B. Abdurakhmanov, Kh. Ashurov, U. Nuraliev

NEW ENERGY AND RESOURCE SAVING TECHNOLOGIES FOR PRODUCING SILICON AND ITS ALLOYS

S. Nasriddinov, Sh. Ismailov, D. Esbergenov, M. Mannonov

CRITERIA FOR OBTAINING COMPENSATED NICKEL SILICON

A. Tyavlovsky, A. Zharin, V. Mikitsevich, R. Vorobey

SCANNING PHOTOSTIMULATED ELECTROMETRY FOR TESTING THE UNIFORMITY OF SPATIAL DISTRIBUTION OF SEMICONDUCTOR WAFERS PARAMETERS

K. Ayupov, G. Mavlonov, S. Valiyev, Sh. Shergoziyev

POSSIBILITIES OF USING HIGHLY COMPENSATED SILICON IN ELECTRONICS

Sh. Utamuradova, Z. Olimbekov, A. Uteniyazova, D. Rakhmanov

INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON

N. Glukhov, V. Felitsyn, Y. Metel, A. Mateyko

CIRCUIT SIMULATION OF RADIATION-SENSITIVE PARAMETERS OF THE OPERATIONAL AMPLIFIER LM358

T. Razykov, K. Kuchkarov, B. Ergashev, Sh. Esanov

IMPROVING THE PHOTOELECTRIC CHARACTERISTICS OF THIN-FILM SOLAR CELLS THE BASED CdTe BY DOPING WITH COPPER THE BASE LAYER OF CADMIUM TELLURIDE

Kh. Daliev, Sh. Utamuradova, Z. Khaidarov

RESEARCH OF PHOTOELECTRIC PROPERTIES OF A GAS DISCHARGE CELL WITH PHOTOELECTRODES BASED ON GALLIUM ARSENIDE AND SILICON WITH PLASMA CONTACTS

2020,Volume 2, Issue 4
To find out abstract click articale title

S. Zainabidinov, U. Babakhodjaev, A. Nabiyev

INVESTIGATION OF RECOMBINATIONAL PROCESSES THROUGH PHOTOELECTRIC CONDUCTIVITY OF THE FILM OF HYDROGENATED AMORPHOUS SILICON AND ITS MODIFICATION

Sh. Daliev, J. Khamdamov, Y. Ravshanov, D. Esbergenov

INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY

A. Zharin, K. Pantsialeyeu, A. Svistun, K. Tyavlovsky

DETERMINING THE LIFETIME OF MINORITY CHARGE CARRIERS AND IRON IMPURITY CONCENTRATION IN SEMICONDUCTOR STRUCTURES WITH SUBMICRON LAYERS

A. Mavlyanov, A. Urakov, A. Narbayev

PHOTOELECTRIC MEASUREMENTS OF SELENIUM DOPED SILICON

S. Rembeza, A. Boboev, T. Men'shikova, T. Svistova

STRUCTURAL FEATURES OF THE THIN-FILM n-ZnO/p-Si HETEROJUNCTION

A. Uteniyazov, K. Ismailov, M. Nsanbaev, E. Ysenbaeva

THE POSITIVE FEEDBACK AMPLIFICATION MECHANISM OF THE INJECTION PHOTODIODE BASED ON LARGE-BLOCK CdTe FILMS

G. Gulyamov, G. Dadamirzaev, M. Dadamirzayev, M. Kosimova

THE INFLUENCE OF THE MICROWAVE FIELD ON THE CHARACTERISTICS OF THE p-n JUNCTION

Z. Azamatov, V. Kim, M. Yoldoshev

COMPACT SPECKLE INTERFEROMETER FOR DIGITAL SHEAROGRAPHY

M. Kurbanov, B. Abdurakhmanov, Kh. Ashurov, U. Nuraliev

NEW ENERGY AND RESOURCE SAVING TECHNOLOGIES FOR PRODUCING SILICON AND ITS ALLOYS

S. Nasriddinov, Sh. Ismailov, D. Esbergenov, M. Mannonov

CRITERIA FOR OBTAINING COMPENSATED NICKEL SILICON

A. Tyavlovsky, A. Zharin, V. Mikitsevich, R. Vorobey

SCANNING PHOTOSTIMULATED ELECTROMETRY FOR TESTING THE UNIFORMITY OF SPATIAL DISTRIBUTION OF SEMICONDUCTOR WAFERS PARAMETERS

K. Ayupov, G. Mavlonov, S. Valiyev, Sh. Shergoziyev

POSSIBILITIES OF USING HIGHLY COMPENSATED SILICON IN ELECTRONICS

Sh. Utamuradova, Z. Olimbekov, A. Uteniyazova, D. Rakhmanov

INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON

N. Glukhov, V. Felitsyn, Y. Metel, A. Mateyko

CIRCUIT SIMULATION OF RADIATION-SENSITIVE PARAMETERS OF THE OPERATIONAL AMPLIFIER LM358

T. Razykov, K. Kuchkarov, B. Ergashev, Sh. Esanov

IMPROVING THE PHOTOELECTRIC CHARACTERISTICS OF THIN-FILM SOLAR CELLS THE BASED CdTe BY DOPING WITH COPPER THE BASE LAYER OF CADMIUM TELLURIDE

Kh. Daliev, Sh. Utamuradova, Z. Khaidarov

RESEARCH OF PHOTOELECTRIC PROPERTIES OF A GAS DISCHARGE CELL WITH PHOTOELECTRODES BASED ON GALLIUM ARSENIDE AND SILICON WITH PLASMA CONTACTS